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2N7002DW-G

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
2N7002DW-G is ideal for industrial and consumer electronics applications, including switching and amplification in low-power circuits. Its fast switching speed and low input capacitance make it suitable for use in power management and signal processing.
Specification
Specification
MOSFET 2N-CH 60V 0.115A SC88
MOSFET 2N-CH 60V 0.115A SC88
Detailed specification
Detailed specification
Mosfet Array 60V 115mA (Ta) 200mW (Ta) surface-mounted SC-88/SC70-6/SOT-363
Mosfet Array 60V 115mA (Ta) 200mW (Ta) surface-mounted SC-88/SC70-6/SOT-363
Description
Description
The 2N7002DW-G is a dual N-Channel MOSFET designed for low on-resistance and low gate threshold voltage applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 115mA. The device is housed in an ultra-small SC-88 package, making it suitable for space-constrained applications.
The 2N7002DW-G is a dual N-Channel MOSFET designed for low on-resistance and low gate threshold voltage applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 115mA. The device is housed in an ultra-small SC-88 package, making it suitable for space-constrained applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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