2N7002BKV,115
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
MOSFET 2N-CH 60V 0.34A SOT666
MOSFET 2N-CH 60V 0.34A SOT666
Detailed specification
Detailed specification
Mosfet Array 60V 340mA 350mW surface-mounted SOT-666
Mosfet Array 60V 340mA 350mW surface-mounted SOT-666
Description
Description
The 2N7002BKV is a dual N-channel enhancement mode MOSFET featuring Trench technology, designed for applications requiring high-speed switching. It operates at a maximum drain-source voltage of 60V and a continuous drain current of 340mA. The device is housed in a compact SOT666 package, ensuring efficient space utilization in circuit designs.
The 2N7002BKV is a dual N-channel enhancement mode MOSFET featuring Trench technology, designed for applications requiring high-speed switching. It operates at a maximum drain-source voltage of 60V and a continuous drain current of 340mA. The device is housed in a compact SOT666 package, ensuring efficient space utilization in circuit designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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