2N7000TA
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 60V 200MA TO92-3
MOSFET N-CH 60V 200MA TO92-3
Detailed specification
Detailed specification
N-Channel 60 V (2.36 in) 200mA (Tc) 400mW (Ta) Through Hole TO-92-3
N-Channel 60 V (2.36 in) 200mA (Tc) 400mW (Ta) Through Hole TO-92-3
Description
Description
The 2N7000TA from onsemi is an N-Channel MOSFET designed for low voltage applications. It features a maximum drain-source voltage of 60V and can handle a continuous drain current of 200mA at a case temperature (Tc). The device is housed in a TO-92-3 package, making it suitable for through-hole mounting. With a power dissipation capability of 400mW at ambient temperature (Ta), this MOSFET is ideal for switching and amplification applications in various electronic circuits, ensuring reliable performance in compact designs.
The 2N7000TA from onsemi is an N-Channel MOSFET designed for low voltage applications. It features a maximum drain-source voltage of 60V and can handle a continuous drain current of 200mA at a case temperature (Tc). The device is housed in a TO-92-3 package, making it suitable for through-hole mounting. With a power dissipation capability of 400mW at ambient temperature (Ta), this MOSFET is ideal for switching and amplification applications in various electronic circuits, ensuring reliable performance in compact designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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