2N7000
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 60V 350MA TO92-3
MOSFET N-CH 60V 350MA TO92-3
Detailed specification
Detailed specification
N-Channel 60 V 350mA (Tc) 1W (Tc) Through Hole TO-92-3
N-Channel 60 V 350mA (Tc) 1W (Tc) Through Hole TO-92-3
Description
Description
The 2N7000 is an N-Channel MOSFET designed for low voltage applications, featuring a maximum drain-source voltage of 60V and a continuous drain current rating of 350mA at a case temperature (Tc) of 25°C. This device is housed in a TO-92-3 package, making it suitable for through-hole mounting. With a power dissipation capability of 1W at Tc, it is ideal for switching and amplification applications in various electronic circuits. The 2N7000 is widely used in low-power switching applications, providing efficient performance in compact designs.
The 2N7000 is an N-Channel MOSFET designed for low voltage applications, featuring a maximum drain-source voltage of 60V and a continuous drain current rating of 350mA at a case temperature (Tc) of 25°C. This device is housed in a TO-92-3 package, making it suitable for through-hole mounting. With a power dissipation capability of 1W at Tc, it is ideal for switching and amplification applications in various electronic circuits. The 2N7000 is widely used in low-power switching applications, providing efficient performance in compact designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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