2N6517BU
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN 350V 0.5A TO92-3
TRANS NPN 350V 0.5A TO92-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 350 V 500 mA 200 MHz 625 mW Through Hole TO-92-3
Bipolar (BJT) Transistor NPN 350 V 500 mA 200 MHz 625 mW Through Hole TO-92-3
Description
Description
The 2N6517BU is a high voltage NPN bipolar junction transistor (BJT) designed for applications requiring up to 350 V collector-emitter voltage and 500 mA collector current. It features a maximum power dissipation of 625 mW and a frequency response of 200 MHz, making it suitable for various electronic circuits.
The 2N6517BU is a high voltage NPN bipolar junction transistor (BJT) designed for applications requiring up to 350 V collector-emitter voltage and 500 mA collector current. It features a maximum power dissipation of 625 mW and a frequency response of 200 MHz, making it suitable for various electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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