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2N6059

Manufacturer

ST MICROELECTRONICS

data-sheet
Data sheet
Data sheet
2N6059 is utilized in industrial applications, particularly in power linear and low-frequency switching equipment. Its high gain and current capabilities make it ideal for driving loads in various industrial systems, ensuring reliable performance in demanding environments.
Specification
Specification
TRANS NPN DARL 100V 12A TO3
TRANS NPN DARL 100V 12A TO3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN - Darlington 100 V 12 A 4MHz 150 W Chassis Mount TO-3
Bipolar (BJT) Transistor NPN - Darlington 100 V 12 A 4MHz 150 W Chassis Mount TO-3
Description
Description
The 2N6059 is a silicon NPN Darlington transistor designed for high current and high dissipation applications. It features a maximum collector-emitter voltage of 100 V, a collector current rating of 12 A, and a total dissipation of 150 W. This device is suitable for power linear and low-frequency switching applications, housed in a TO-3 metal case.
The 2N6059 is a silicon NPN Darlington transistor designed for high current and high dissipation applications. It features a maximum collector-emitter voltage of 100 V, a collector current rating of 12 A, and a total dissipation of 150 W. This device is suitable for power linear and low-frequency switching applications, housed in a TO-3 metal case.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Other manufacturers
2N6059 is also available from the following manufacturers
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