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2N6045G

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
The 2N6045G is suitable for industrial applications, particularly in general-purpose amplifiers and low-speed switching circuits. Its high current gain and robust voltage ratings make it ideal for power management and control systems in various electronic devices.
Specification
Specification
TRANS NPN DARL 100V 8A TO220
TRANS NPN DARL 100V 8A TO220
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 75 W Through Hole TO-220
Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 75 W Through Hole TO-220
Description
Description
The 2N6045G is a NPN Darlington bipolar transistor designed for general-purpose amplifier and low-speed switching applications. It features a collector-emitter voltage of 100 V, a continuous collector current of 8 A, and a power dissipation of 75 W. The device is housed in a TO-220 package and offers high DC current gain (hFE = 2500 typ at IC = 4.0 A) and low collector-emitter saturation voltage (VCE(sat) = 2.0 V max at IC = 3.0 A).
The 2N6045G is a NPN Darlington bipolar transistor designed for general-purpose amplifier and low-speed switching applications. It features a collector-emitter voltage of 100 V, a continuous collector current of 8 A, and a power dissipation of 75 W. The device is housed in a TO-220 package and offers high DC current gain (hFE = 2500 typ at IC = 4.0 A) and low collector-emitter saturation voltage (VCE(sat) = 2.0 V max at IC = 3.0 A).
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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