2N6045G
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN DARL 100V 8A TO220
TRANS NPN DARL 100V 8A TO220
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 75 W Through Hole TO-220
Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 75 W Through Hole TO-220
Description
Description
The 2N6045G is a NPN Darlington bipolar transistor designed for general-purpose amplifier and low-speed switching applications. It features a collector-emitter voltage of 100 V, a continuous collector current of 8 A, and a power dissipation of 75 W. The device is housed in a TO-220 package and offers high DC current gain (hFE = 2500 typ at IC = 4.0 A) and low collector-emitter saturation voltage (VCE(sat) = 2.0 V max at IC = 3.0 A).
The 2N6045G is a NPN Darlington bipolar transistor designed for general-purpose amplifier and low-speed switching applications. It features a collector-emitter voltage of 100 V, a continuous collector current of 8 A, and a power dissipation of 75 W. The device is housed in a TO-220 package and offers high DC current gain (hFE = 2500 typ at IC = 4.0 A) and low collector-emitter saturation voltage (VCE(sat) = 2.0 V max at IC = 3.0 A).
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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