2N5686G
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN 80V 50A TO204
TRANS NPN 80V 50A TO204
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 80 V 50 A 2MHz 300 W Through Hole TO-204 (TO-3)
Bipolar (BJT) Transistor NPN 80 V 50 A 2MHz 300 W Through Hole TO-204 (TO-3)
Description
Description
The 2N5686G is a high-current NPN bipolar junction transistor designed for high-power amplifier and switching circuit applications. It features a collector-emitter voltage rating of 80 V, continuous collector current of 50 A, and a power dissipation of 300 W. The device operates at a frequency of up to 2 MHz and has a low collector-emitter saturation voltage of 1.0 V at 25 A. It is housed in a TO-204 (TO-3) package.
The 2N5686G is a high-current NPN bipolar junction transistor designed for high-power amplifier and switching circuit applications. It features a collector-emitter voltage rating of 80 V, continuous collector current of 50 A, and a power dissipation of 300 W. The device operates at a frequency of up to 2 MHz and has a low collector-emitter saturation voltage of 1.0 V at 25 A. It is housed in a TO-204 (TO-3) package.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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