2N5551TFR
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN 160V 0.6A TO92-3
TRANS NPN 160V 0.6A TO92-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 160 V 600 mA 100 MHz 625 mW Through Hole TO-92-3
Bipolar (BJT) Transistor NPN 160 V 600 mA 100 MHz 625 mW Through Hole TO-92-3
Description
Description
The 2N5551TFR from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 160V and a continuous collector current rating of 600mA, making it suitable for high-voltage switching and amplification tasks. With a transition frequency of 100MHz and a power dissipation capability of 625mW, this TO-92-3 package transistor is ideal for use in audio, RF, and general-purpose applications, ensuring reliable performance in demanding environments.
The 2N5551TFR from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 160V and a continuous collector current rating of 600mA, making it suitable for high-voltage switching and amplification tasks. With a transition frequency of 100MHz and a power dissipation capability of 625mW, this TO-92-3 package transistor is ideal for use in audio, RF, and general-purpose applications, ensuring reliable performance in demanding environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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