2N5550TFR
Manufacturer
FAIRCHILD SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
SMALL SIGNAL BIPOLAR TRANSISTOR,
SMALL SIGNAL BIPOLAR TRANSISTOR,
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 140 V 600 mA 300 MHz 625 mW Through Hole TO-92-3
Bipolar (BJT) Transistor NPN 140 V 600 mA 300 MHz 625 mW Through Hole TO-92-3
Description
Description
The 2N5550TFR is a small signal bipolar NPN transistor designed for high-frequency applications. It features a maximum collector-emitter voltage of 140 V, a collector current rating of 600 mA, and a transition frequency of 300 MHz, making it suitable for various amplification and switching tasks. The device is housed in a TO-92-3 package, ensuring ease of integration into circuits. With a power dissipation capability of 625 mW, it is ideal for low-power applications requiring reliable performance in compact designs.
The 2N5550TFR is a small signal bipolar NPN transistor designed for high-frequency applications. It features a maximum collector-emitter voltage of 140 V, a collector current rating of 600 mA, and a transition frequency of 300 MHz, making it suitable for various amplification and switching tasks. The device is housed in a TO-92-3 package, ensuring ease of integration into circuits. With a power dissipation capability of 625 mW, it is ideal for low-power applications requiring reliable performance in compact designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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