2N5322
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS PNP 75V 2A TO39
TRANS PNP 75V 2A TO39
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 75 V 2 A 10 W Through Hole TO-39
Bipolar (BJT) Transistor PNP 75 V 2 A 10 W Through Hole TO-39
Description
Description
The 2N5322 is a PNP bipolar junction transistor (BJT) designed for high-performance applications. It operates with a maximum collector-emitter voltage of 75 V and can handle a collector current of up to 2 A, making it suitable for various power amplification tasks. The device is housed in a TO-39 metal can package, ensuring robust thermal performance and reliability. With a power dissipation capability of 10 W, the 2N5322 is ideal for use in linear and switching applications, providing efficient signal amplification and control in electronic circuits.
The 2N5322 is a PNP bipolar junction transistor (BJT) designed for high-performance applications. It operates with a maximum collector-emitter voltage of 75 V and can handle a collector current of up to 2 A, making it suitable for various power amplification tasks. The device is housed in a TO-39 metal can package, ensuring robust thermal performance and reliability. With a power dissipation capability of 10 W, the 2N5322 is ideal for use in linear and switching applications, providing efficient signal amplification and control in electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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