2N5320
Manufacturer
MICROCHIP TECHNOLOGY
Specification
Specification
CUSTOM
CUSTOM
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 75 V 2 A 10 W Through Hole TO-5AA
Bipolar (BJT) Transistor NPN 75 V 2 A 10 W Through Hole TO-5AA
Description
Description
The 2N5320 is a high-performance NPN bipolar junction transistor (BJT) designed for various applications requiring reliable switching and amplification. With a maximum collector-emitter voltage of 75 V and a collector current rating of 2 A, this transistor can handle power levels up to 10 W. Packaged in a TO-5AA through-hole configuration, it offers excellent thermal stability and low saturation voltage, making it suitable for use in linear and switching applications in consumer electronics, industrial control systems, and RF amplifiers.
The 2N5320 is a high-performance NPN bipolar junction transistor (BJT) designed for various applications requiring reliable switching and amplification. With a maximum collector-emitter voltage of 75 V and a collector current rating of 2 A, this transistor can handle power levels up to 10 W. Packaged in a TO-5AA through-hole configuration, it offers excellent thermal stability and low saturation voltage, making it suitable for use in linear and switching applications in consumer electronics, industrial control systems, and RF amplifiers.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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