2N5195G
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS PNP 80V 4A TO126
TRANS PNP 80V 4A TO126
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 80 V 4 A 2MHz 40 W Through Hole TO-126
Bipolar (BJT) Transistor PNP 80 V 4 A 2MHz 40 W Through Hole TO-126
Description
Description
The 2N5195G is a PNP bipolar junction transistor designed for power amplifier and switching applications. It features a collector-emitter voltage rating of 80 V, a collector current of 4 A, and a maximum power dissipation of 40 W. The device operates at a frequency of up to 2 MHz and is housed in a TO-126 package.
The 2N5195G is a PNP bipolar junction transistor designed for power amplifier and switching applications. It features a collector-emitter voltage rating of 80 V, a collector current of 4 A, and a maximum power dissipation of 40 W. The device operates at a frequency of up to 2 MHz and is housed in a TO-126 package.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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