2N5191G
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN 60V 4A TO126
TRANS NPN 60V 4A TO126
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 60 V 4 A 2MHz 40 W Through Hole TO-126
Bipolar (BJT) Transistor NPN 60 V 4 A 2MHz 40 W Through Hole TO-126
Description
Description
The 2N5191G is a silicon NPN power transistor designed for power amplifier and switching applications. It features a collector-emitter voltage rating of 60 V, a collector current of 4 A, and a total device dissipation of 40 W. The transistor operates at a frequency of up to 2 MHz and is housed in a TO-126 package, ensuring excellent thermal performance with a thermal resistance of 3.12 °C/W.
The 2N5191G is a silicon NPN power transistor designed for power amplifier and switching applications. It features a collector-emitter voltage rating of 60 V, a collector current of 4 A, and a total device dissipation of 40 W. The transistor operates at a frequency of up to 2 MHz and is housed in a TO-126 package, ensuring excellent thermal performance with a thermal resistance of 3.12 °C/W.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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