2N5116
Manufacturer
CENTRAL SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
JFET P-CH 30V TO18
JFET P-CH 30V TO18
Detailed specification
Detailed specification
JFET P-Channel 30 V (1.18 in) 500 mW (0.02 W) Through Hole TO-18
JFET P-Channel 30 V (1.18 in) 500 mW (0.02 W) Through Hole TO-18
Description
Description
The Central Semiconductor 2N5116 is a silicon P-Channel JFET designed for switching applications. It features a maximum gate-drain voltage of 30 V, gate-source voltage of 30 V, and a power dissipation of 500 mW. The device operates within a temperature range of -65 to +200 °C, making it suitable for various environments. Its low gate current and high IDSS ratings enhance its performance in electronic circuits.
The Central Semiconductor 2N5116 is a silicon P-Channel JFET designed for switching applications. It features a maximum gate-drain voltage of 30 V, gate-source voltage of 30 V, and a power dissipation of 500 mW. The device operates within a temperature range of -65 to +200 °C, making it suitable for various environments. Its low gate current and high IDSS ratings enhance its performance in electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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