2N5114
Manufacturer
MICROCHIP TECHNOLOGY
Data sheet
Data sheet
Specification
Specification
JFET P-CH 30V TO18
JFET P-CH 30V TO18
Detailed specification
Detailed specification
JFET P-Channel 30 V 500 mW Through Hole TO-18 (TO-206AA)
JFET P-Channel 30 V 500 mW Through Hole TO-18 (TO-206AA)
Description
Description
The 2N5114 is a P-Channel JFET designed for low-noise applications, featuring a maximum drain-source voltage of 30V and a power dissipation capability of 500 mW. This device is housed in a TO-18 (TO-206AA) package, suitable for through-hole mounting. It offers excellent performance in analog signal processing and switching applications, making it ideal for use in amplifiers, oscillators, and other electronic circuits requiring high input impedance and low distortion. Its robust design ensures reliability in various operating conditions.
The 2N5114 is a P-Channel JFET designed for low-noise applications, featuring a maximum drain-source voltage of 30V and a power dissipation capability of 500 mW. This device is housed in a TO-18 (TO-206AA) package, suitable for through-hole mounting. It offers excellent performance in analog signal processing and switching applications, making it ideal for use in amplifiers, oscillators, and other electronic circuits requiring high input impedance and low distortion. Its robust design ensures reliability in various operating conditions.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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