2N4401TAR
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN 40V 0.6A TO92-3
TRANS NPN 40V 0.6A TO92-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 40 V 600 mA 250MHz 625 mW Through Hole TO-92-3
Bipolar (BJT) Transistor NPN 40 V 600 mA 250MHz 625 mW Through Hole TO-92-3
Description
Description
The 2N4401TAR from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for various switching and amplification applications. It operates with a maximum collector-emitter voltage of 40V and can handle a collector current of up to 600mA. With a transition frequency of 250MHz and a power dissipation of 625mW, this TO-92-3 package transistor is ideal for low to medium power applications. Its compact size and reliable performance make it suitable for use in consumer electronics, signal processing, and general-purpose amplification circuits.
The 2N4401TAR from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for various switching and amplification applications. It operates with a maximum collector-emitter voltage of 40V and can handle a collector current of up to 600mA. With a transition frequency of 250MHz and a power dissipation of 625mW, this TO-92-3 package transistor is ideal for low to medium power applications. Its compact size and reliable performance make it suitable for use in consumer electronics, signal processing, and general-purpose amplification circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Gabriella or one of our other skilled sales representatives. They'll help you find the right service option.C