2N4401BU
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
BJT TO92 40V NPN 0.25W 150C
BJT TO92 40V NPN 0.25W 150C
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 40 V 600 mA 250MHz 625 mW Through Hole TO-92-3
Bipolar (BJT) Transistor NPN 40 V 600 mA 250MHz 625 mW Through Hole TO-92-3
Description
Description
The 2N4401BU from onsemi is a high-performance NPN bipolar junction transistor (BJT) housed in a TO-92 package. It operates with a maximum collector-emitter voltage of 40V and can handle a collector current of up to 600mA. With a power dissipation capability of 625mW and a transition frequency of 250MHz, this transistor is suitable for a variety of switching and amplification applications. Its robust design allows for operation at temperatures up to 150°C, making it ideal for demanding environments.
The 2N4401BU from onsemi is a high-performance NPN bipolar junction transistor (BJT) housed in a TO-92 package. It operates with a maximum collector-emitter voltage of 40V and can handle a collector current of up to 600mA. With a power dissipation capability of 625mW and a transition frequency of 250MHz, this transistor is suitable for a variety of switching and amplification applications. Its robust design allows for operation at temperatures up to 150°C, making it ideal for demanding environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Martin or one of our other skilled sales representatives. They'll help you find the right service option.C