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2N3906TFR

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
2N3906TFR is utilized in general-purpose amplifier and switching applications within the domains of consumer electronics, telecommunications, and industrial control systems. Its specifications allow for effective performance in low to moderate power applications, ensuring reliability and efficiency in various electronic designs.
Specification
Specification
TRANS PNP 40V 0.2A TO92-3
TRANS PNP 40V 0.2A TO92-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 40 V 200 mA 250MHz 625 mW Through Hole TO-92-3
Bipolar (BJT) Transistor PNP 40 V 200 mA 250MHz 625 mW Through Hole TO-92-3
Description
Description
The 2N3906TFR is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. It operates at a collector-emitter voltage of -40V and a continuous collector current of -200mA, with a maximum power dissipation of 625mW. The device features a current gain bandwidth product of 250MHz, making it suitable for a variety of electronic circuits.
The 2N3906TFR is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. It operates at a collector-emitter voltage of -40V and a continuous collector current of -200mA, with a maximum power dissipation of 625mW. The device features a current gain bandwidth product of 250MHz, making it suitable for a variety of electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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