2N3906BU
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
BJT TO92 40V PNP 0.625W 150C
BJT TO92 40V PNP 0.625W 150C
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 40 V 200 mA 250MHz 625 mW Through Hole TO-92-3
Bipolar (BJT) Transistor PNP 40 V 200 mA 250MHz 625 mW Through Hole TO-92-3
Description
Description
The 2N3906BU is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a collector-emitter voltage of -40V, a collector current of -200mA, and a power dissipation of 625mW. The device operates at a maximum junction temperature of 150°C and has a bandwidth of 250MHz, making it suitable for various electronic circuits.
The 2N3906BU is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a collector-emitter voltage of -40V, a collector current of -200mA, and a power dissipation of 625mW. The device operates at a maximum junction temperature of 150°C and has a bandwidth of 250MHz, making it suitable for various electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
2N3906BU is also available from the following manufacturersContact sales
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