2N3725
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN 50V 1A TO5
TRANS NPN 50V 1A TO5
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 50 V 1 A 800 mW Through Hole TO-5
Bipolar (BJT) Transistor NPN 50 V 1 A 800 mW Through Hole TO-5
Description
Description
The 2N3725 is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It operates with a maximum collector-emitter voltage of 50V and can handle a collector current of up to 1A, making it suitable for medium power switching and amplification tasks. The device is housed in a TO-5 metal can package, ensuring robust thermal performance and reliability. With a power dissipation capability of 800 mW, the 2N3725 is ideal for use in audio amplifiers, signal processing, and general-purpose switching applications.
The 2N3725 is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It operates with a maximum collector-emitter voltage of 50V and can handle a collector current of up to 1A, making it suitable for medium power switching and amplification tasks. The device is housed in a TO-5 metal can package, ensuring robust thermal performance and reliability. With a power dissipation capability of 800 mW, the 2N3725 is ideal for use in audio amplifiers, signal processing, and general-purpose switching applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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