2N3440
Manufacturer
MICROCHIP TECHNOLOGY
Data sheet
Data sheet
Specification
Specification
TRANS NPN 250V 1A TO39
TRANS NPN 250V 1A TO39
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 250 V 1 A 800 mW Through Hole TO-39 (TO-205AD)
Bipolar (BJT) Transistor NPN 250 V 1 A 800 mW Through Hole TO-39 (TO-205AD)
Description
Description
The 2N3440 is a high-performance NPN bipolar junction transistor (BJT) designed for various applications requiring reliable switching and amplification. With a maximum collector-emitter voltage of 250V and a collector current rating of 1A, this transistor can handle significant power levels, making it suitable for use in power amplifiers and switching circuits. The device is housed in a TO-39 (TO-205AD) package, ensuring ease of mounting in through-hole applications. Its maximum power dissipation is 800 mW, providing robust performance in demanding environments.
The 2N3440 is a high-performance NPN bipolar junction transistor (BJT) designed for various applications requiring reliable switching and amplification. With a maximum collector-emitter voltage of 250V and a collector current rating of 1A, this transistor can handle significant power levels, making it suitable for use in power amplifiers and switching circuits. The device is housed in a TO-39 (TO-205AD) package, ensuring ease of mounting in through-hole applications. Its maximum power dissipation is 800 mW, providing robust performance in demanding environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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