2N3055G
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN 60V 15A TO204
TRANS NPN 60V 15A TO204
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 60 V 15 A 2.5MHz 115 W Through Hole TO-204 (TO-3)
Bipolar (BJT) Transistor NPN 60 V 15 A 2.5MHz 115 W Through Hole TO-204 (TO-3)
Description
Description
The 2N3055G is a high-performance NPN bipolar junction transistor designed for general-purpose switching and amplifier applications. It features a collector-emitter voltage rating of 60 V, a continuous collector current of 15 A, and a total power dissipation of 115 W. With a DC current gain (hFE) of 20-70 and a frequency response of 2.5 MHz, it is suitable for various electronic circuits.
The 2N3055G is a high-performance NPN bipolar junction transistor designed for general-purpose switching and amplifier applications. It features a collector-emitter voltage rating of 60 V, a continuous collector current of 15 A, and a total power dissipation of 115 W. With a DC current gain (hFE) of 20-70 and a frequency response of 2.5 MHz, it is suitable for various electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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