2N3055
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
TRANS NPN 60V 15A TO3
TRANS NPN 60V 15A TO3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 60 V 15 A 115 W Chassis Mount TO-3
Bipolar (BJT) Transistor NPN 60 V 15 A 115 W Chassis Mount TO-3
Description
Description
The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor designed for power switching applications. It features a maximum collector-emitter voltage of 60 V, a collector current rating of 15 A, and a total power dissipation of 115 W. Housed in a TO-3 metal case, it is suitable for use in high fidelity amplifiers, series and shunt regulators, and output stages.
The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor designed for power switching applications. It features a maximum collector-emitter voltage of 60 V, a collector current rating of 15 A, and a total power dissipation of 115 W. Housed in a TO-3 metal case, it is suitable for use in high fidelity amplifiers, series and shunt regulators, and output stages.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
2N3055 is also available from the following manufacturersContact sales
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