2N2907AUB
Manufacturer
MICROCHIP TECHNOLOGY
Data sheet
Data sheet
Specification
Specification
TRANS PNP 60V 0.6A UB
TRANS PNP 60V 0.6A UB
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 60 V 600 mA 500 mW surface-mounted UB
Bipolar (BJT) Transistor PNP 60 V 600 mA 500 mW surface-mounted UB
Description
Description
The 2N2907AUB is a PNP bipolar junction transistor (BJT) designed for high-performance applications. It operates with a maximum collector-emitter voltage of 60V and can handle a collector current of up to 600mA, making it suitable for various switching and amplification tasks. With a power dissipation capability of 500mW, this surface-mounted device is ideal for compact circuit designs. Its robust construction ensures reliability in demanding environments, making it a preferred choice for engineers in the electronics industry.
The 2N2907AUB is a PNP bipolar junction transistor (BJT) designed for high-performance applications. It operates with a maximum collector-emitter voltage of 60V and can handle a collector current of up to 600mA, making it suitable for various switching and amplification tasks. With a power dissipation capability of 500mW, this surface-mounted device is ideal for compact circuit designs. Its robust construction ensures reliability in demanding environments, making it a preferred choice for engineers in the electronics industry.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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