2N2905A
Manufacturer
MICROCHIP TECHNOLOGY
Data sheet
Data sheet
Specification
Specification
TRANS PNP 60V 0.6A TO39
TRANS PNP 60V 0.6A TO39
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 60 V 600 mA 800 mW Through Hole TO-39 (TO-205AD)
Bipolar (BJT) Transistor PNP 60 V 600 mA 800 mW Through Hole TO-39 (TO-205AD)
Description
Description
The 2N2905A is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 60V and a collector current rating of 600mA, making it suitable for various electronic circuits. The device is housed in a TO-39 (TO-205AD) package, which allows for easy through-hole mounting. With a power dissipation capability of 800mW, the 2N2905A is ideal for low to medium power applications, ensuring reliable performance in diverse electronic systems.
The 2N2905A is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector-emitter voltage of 60V and a collector current rating of 600mA, making it suitable for various electronic circuits. The device is housed in a TO-39 (TO-205AD) package, which allows for easy through-hole mounting. With a power dissipation capability of 800mW, the 2N2905A is ideal for low to medium power applications, ensuring reliable performance in diverse electronic systems.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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