2N2222AUA
Manufacturer
MICROCHIP TECHNOLOGY
Data sheet
Data sheet
Specification
Specification
TRANS NPN 50V 0.8A 4SMD
TRANS NPN 50V 0.8A 4SMD
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 50 V 800 mA 650 mW surface-mounted 4-SMD
Bipolar (BJT) Transistor NPN 50 V 800 mA 650 mW surface-mounted 4-SMD
Description
Description
The 2N2222AUA is a high-performance NPN bipolar junction transistor (BJT) designed for a variety of switching and amplification applications. It features a maximum collector-emitter voltage of 50V and a collector current rating of 800mA, making it suitable for low to medium power applications. The device is housed in a compact 4-SMD package, allowing for efficient surface mount assembly. With a power dissipation capability of 650mW, this transistor is ideal for use in signal processing, driver circuits, and general-purpose amplification tasks.
The 2N2222AUA is a high-performance NPN bipolar junction transistor (BJT) designed for a variety of switching and amplification applications. It features a maximum collector-emitter voltage of 50V and a collector current rating of 800mA, making it suitable for low to medium power applications. The device is housed in a compact 4-SMD package, allowing for efficient surface mount assembly. With a power dissipation capability of 650mW, this transistor is ideal for use in signal processing, driver circuits, and general-purpose amplification tasks.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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