2N2221AUA
Manufacturer
MICROSEMI
Data sheet
Data sheet
Specification
Specification
TRANS NPN 50V 0.8A 4SMD
TRANS NPN 50V 0.8A 4SMD
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 50 V 800 mA 650 mW surface-mounted 4-SMD
Bipolar (BJT) Transistor NPN 50 V 800 mA 650 mW surface-mounted 4-SMD
Description
Description
The 2N2221AUA is a NPN bipolar junction transistor designed for switching applications. It features a collector-emitter voltage rating of 50 V, a collector current of 800 mA, and a total power dissipation of 650 mW. This surface-mounted device is suitable for high-frequency applications with a thermal resistance of 210 °C/W. Its compact design allows for efficient thermal management and integration into various electronic circuits.
The 2N2221AUA is a NPN bipolar junction transistor designed for switching applications. It features a collector-emitter voltage rating of 50 V, a collector current of 800 mA, and a total power dissipation of 650 mW. This surface-mounted device is suitable for high-frequency applications with a thermal resistance of 210 °C/W. Its compact design allows for efficient thermal management and integration into various electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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