2N1893
Manufacturer
HARRIS
Data sheet
Data sheet
Specification
Specification
TRANS NPN 80V 0.5A TO5
TRANS NPN 80V 0.5A TO5
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 80 V 500 mA 800 mW Through Hole TO-5
Bipolar (BJT) Transistor NPN 80 V 500 mA 800 mW Through Hole TO-5
Description
Description
The 2N1893 is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 80V and can handle a collector current of up to 500mA, making it suitable for medium power switching and amplification tasks. With a power dissipation capability of 800mW, this transistor is housed in a TO-5 metal can package, ensuring robust thermal performance and reliability. Its through-hole design facilitates easy integration into circuit boards, ideal for both prototyping and production.
The 2N1893 is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It features a maximum collector-emitter voltage of 80V and can handle a collector current of up to 500mA, making it suitable for medium power switching and amplification tasks. With a power dissipation capability of 800mW, this transistor is housed in a TO-5 metal can package, ensuring robust thermal performance and reliability. Its through-hole design facilitates easy integration into circuit boards, ideal for both prototyping and production.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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