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2ED24427N01FXUMA1

Manufacturer

INFINEON

data-sheet
Data sheet
Data sheet
The 2ED24427N01FXUMA1 is suitable for industrial applications, including electric vehicle (EV) charging stations, battery management systems, DC-DC converters, industrial drives, and motor control. Its robust design and high current capability make it ideal for driving high current IGBTs and enhancement mode N-Channel MOSFETs in power electronic applications.
Specification
Specification
IC GATE DRVR LOW-SIDE 8SOIC
IC GATE DRVR LOW-SIDE 8SOIC
Detailed specification
Detailed specification
Low-Side Gate Driver IC Non-Inverting PG-DSO-8-900
Low-Side Gate Driver IC Non-Inverting PG-DSO-8-900
Description
Description
The 2ED24427N01FXUMA1 is a dual-channel low-side gate driver IC from Infineon Technologies, capable of sourcing and sinking 10 A. It operates with a supply voltage range of 12.5 V to 24 V and features an under-voltage lockout at 11.5 V. The device is compatible with 3.3 V, 5 V, and 15 V logic levels, and offers fast switching times with a maximum turn-on delay of 40 ns and turn-off delay of 55 ns. It is designed for driving IGBTs and N-Channel MOSFETs in various power applications.
The 2ED24427N01FXUMA1 is a dual-channel low-side gate driver IC from Infineon Technologies, capable of sourcing and sinking 10 A. It operates with a supply voltage range of 12.5 V to 24 V and features an under-voltage lockout at 11.5 V. The device is compatible with 3.3 V, 5 V, and 15 V logic levels, and offers fast switching times with a maximum turn-on delay of 40 ns and turn-off delay of 55 ns. It is designed for driving IGBTs and N-Channel MOSFETs in various power applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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