logo

2ED2182S06FXUMA1

Manufacturer

INFINEON

data-sheet
Data sheet
Data sheet
The 2ED2182S06FXUMA1 is utilized in industrial applications such as motor drives, inverters, and power supplies. It is suitable for driving IGBTs and enhancement mode N-channel MOSFETs in systems like refrigeration compressors, electric vehicle charging stations, and high-power LED lighting, ensuring reliable operation under high voltage conditions.
Specification
Specification
IC GATE DRVR HALF-BRIDGE 8SOIC
IC GATE DRVR HALF-BRIDGE 8SOIC
Detailed specification
Detailed specification
Half-Bridge Gate Driver IC Non-Inverting PG-DSO-8-69
Half-Bridge Gate Driver IC Non-Inverting PG-DSO-8-69
Description
Description
The 2ED2182S06FXUMA1 is a 650 V half-bridge gate driver IC featuring integrated bootstrap diode technology. It supports high-speed operation with a maximum output current of ±2.5 A, and operates with supply voltages from 10 V to 20 V. The device is designed for driving IGBTs and N-channel MOSFETs in various power applications, ensuring robust performance with negative voltage tolerance and independent under-voltage lockout for both channels.
The 2ED2182S06FXUMA1 is a 650 V half-bridge gate driver IC featuring integrated bootstrap diode technology. It supports high-speed operation with a maximum output current of ±2.5 A, and operates with supply voltages from 10 V to 20 V. The device is designed for driving IGBTs and N-channel MOSFETs in various power applications, ensuring robust performance with negative voltage tolerance and independent under-voltage lockout for both channels.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Marcus or one of our other skilled sales representatives. They'll help you find the right service option.
Marcus Gustafsson
Upload BOM
Do you want to upload an entire BOM and get a ready-made quote within a few hours? Our salespeople will immediately take care of your request and get back to you.