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2ED2109S06FXUMA1

Manufacturer

INFINEON

data-sheet
Data sheet
Data sheet
The 2ED2109S06FXUMA1 is suitable for industrial applications, particularly in driving IGBTs and enhancement mode N-Channel MOSFETs. Typical applications include motor drives, inverters, refrigeration compressors, battery-operated appliances, and electric vehicle charging stations. Its robust design ensures reliable operation in high-voltage environments.
Specification
Specification
IC GATE DRVR HALF-BRIDGE 8SOIC
IC GATE DRVR HALF-BRIDGE 8SOIC
Detailed specification
Detailed specification
Half-Bridge Gate Driver IC Non-Inverting PG-DSO-8-53
Half-Bridge Gate Driver IC Non-Inverting PG-DSO-8-53
Description
Description
The 2ED2109S06FXUMA1 is a 650 V half-bridge gate driver IC featuring integrated bootstrap diode technology. It supports negative voltage tolerance on inputs and operates with a supply voltage range of 10 V to 20 V. The device includes independent under-voltage lockout for both channels, high-speed output drivers, and is compatible with 3.3 V, 5 V, and 15 V logic levels. It is designed for driving IGBTs and N-channel MOSFETs in various power electronic applications.
The 2ED2109S06FXUMA1 is a 650 V half-bridge gate driver IC featuring integrated bootstrap diode technology. It supports negative voltage tolerance on inputs and operates with a supply voltage range of 10 V to 20 V. The device includes independent under-voltage lockout for both channels, high-speed output drivers, and is compatible with 3.3 V, 5 V, and 15 V logic levels. It is designed for driving IGBTs and N-channel MOSFETs in various power electronic applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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