1N3768R
Manufacturer
GENESIC SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
DIODE GEN PURP REV 1KV 35A DO5
DIODE GEN PURP REV 1KV 35A DO5
Detailed specification
Detailed specification
Diode 1000 V 35A Chassis, Stud Mount DO-5
Diode 1000 V 35A Chassis, Stud Mount DO-5
Description
Description
The 1N3768R is a high-performance silicon standard recovery diode designed for general-purpose applications. It features a repetitive peak reverse voltage (VRRM) of 1000 V and a continuous forward current (IF) of 35 A. The diode is housed in a DO-5 package, offering high surge capability and a wide operating temperature range of -55 to 150 °C.
The 1N3768R is a high-performance silicon standard recovery diode designed for general-purpose applications. It features a repetitive peak reverse voltage (VRRM) of 1000 V and a continuous forward current (IF) of 35 A. The diode is housed in a DO-5 package, offering high surge capability and a wide operating temperature range of -55 to 150 °C.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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