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1N3595TR

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
1N3595TR is designed for general-purpose applications in electronics, including power supply circuits, signal processing, and rectification in various consumer and industrial devices. Its robust specifications make it suitable for use in environments requiring reliable performance under varying conditions.
Specification
Specification
DIODE GEN PURP 150V 200MA DO35
DIODE GEN PURP 150V 200MA DO35
Detailed specification
Detailed specification
Diode 150 V 200mA Through Hole DO-35
Diode 150 V 200mA Through Hole DO-35
Description
Description
The 1N3595TR is a general-purpose diode with a maximum repetitive reverse voltage of 150 V and an average rectified forward current of 200 mA. It features a DO-35 through-hole package, suitable for various applications. The diode has a power dissipation rating of 500 mW and operates within a temperature range of -65°C to +175°C. Its reverse recovery time is 3 µs, making it suitable for switching applications.
The 1N3595TR is a general-purpose diode with a maximum repetitive reverse voltage of 150 V and an average rectified forward current of 200 mA. It features a DO-35 through-hole package, suitable for various applications. The diode has a power dissipation rating of 500 mW and operates within a temperature range of -65°C to +175°C. Its reverse recovery time is 3 µs, making it suitable for switching applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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