1N3595
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
DIODE GEN PURP 150V 200MA DO35
DIODE GEN PURP 150V 200MA DO35
Detailed specification
Detailed specification
Diode 150 V 200mA Through Hole DO-35
Diode 150 V 200mA Through Hole DO-35
Description
Description
The 1N3595 is a general-purpose diode with a maximum repetitive reverse voltage of 150 V and an average rectified forward current of 200 mA. It features a DO-35 through-hole package, with a power dissipation of 500 mW and a storage temperature range of -65 to +200 °C. The diode exhibits a forward voltage drop of 0.52 V at 1 mA and a reverse recovery time of 3 µs, making it suitable for various applications in electronic circuits.
The 1N3595 is a general-purpose diode with a maximum repetitive reverse voltage of 150 V and an average rectified forward current of 200 mA. It features a DO-35 through-hole package, with a power dissipation of 500 mW and a storage temperature range of -65 to +200 °C. The diode exhibits a forward voltage drop of 0.52 V at 1 mA and a reverse recovery time of 3 µs, making it suitable for various applications in electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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